深圳市水星电子有限公司

原装Micron存储器JS28F256M29EWHA说明

制造商
Micron Technology Inc.
制造商零件编号
JS28F256M29EWHA
描述 IC FLASH 256MBIT 110NS 56TSOP
产品属性
类别 集成电路（IC）
存储器
制造商 Micron Technology Inc.
存储器类型 非易失
存储器格式 闪存
技术 FLASH - NOR
存储容量 256Mb （32M x 8，16M x 16）
写周期时间 - 字，页 110ns
访问时间 110ns
存储器接口 并联
电压 - 电源 2.7 V ~ 3.6 V
工作温度 -40°C ~ 85°C（TA）
封装/外壳 56-TFSOP（0.724"，18.40mm 宽）
Features
• 2Gb = stacked device (two 1Gb die)
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–VCC (I/O buffers)
• Asynchronous random/page read
– Page size: 16 words or 32 bytes
– Page access: 25ns
– Random access: 100ns (Fortified BGA);
110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
– 0.88μs per byte (1.14 MB/s) TYP when using full
512-word buffer size in buffer program
• Memory organization
– Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte (x8)/word (x16) program algorithms
• Program/erase suspend and resume capability
– Read from another block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block/chip erase
• VPP/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent, secure
identification
– Programmed or locked at the factory or by the
customer
• Low power consumption: Standby mode
• JESD47-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Package
– 56-pin TSOP, 14 x 20mm
– 64-ball fortified BGA, 13 x 11mm
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C